Invention Grant
- Patent Title: Method of manufacturing source/drain structures
- Patent Title (中): 制造源/漏结构的方法
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Application No.: US12981610Application Date: 2010-12-30
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Publication No.: US08501570B2Publication Date: 2013-08-06
- Inventor: Ziwei Fang , Jeff J. Xu , Ming-Jie Huang , Yimin Huang , Zhiqiang Wu , Min Cao
- Applicant: Ziwei Fang , Jeff J. Xu , Ming-Jie Huang , Yimin Huang , Zhiqiang Wu , Min Cao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/306 ; H01L29/165 ; H01L29/66 ; H01L29/78 ; H01L21/265
Abstract:
An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.
Public/Granted literature
- US20120100681A1 METHOD OF MANUFACTURING SOURCE/DRAIN STRUCTURES Public/Granted day:2012-04-26
Information query
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