Invention Grant
- Patent Title: Intermetal stack for use in a photovoltaic cell
- Patent Title (中): 用于光伏电池的金属间叠层
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Application No.: US13211258Application Date: 2011-08-16
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Publication No.: US08501522B2Publication Date: 2013-08-06
- Inventor: S. Brad Herner , Mark H. Clark , Christopher J. Petti
- Applicant: S. Brad Herner , Mark H. Clark , Christopher J. Petti
- Applicant Address: US NH Nashua
- Assignee: GTAT Corporation
- Current Assignee: GTAT Corporation
- Current Assignee Address: US NH Nashua
- Agency: The Mueller Law Office, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack.
Public/Granted literature
- US20120208317A1 Intermetal Stack for Use in a Photovoltaic Cell Public/Granted day:2012-08-16
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