Invention Grant
- Patent Title: System and method for test pattern for lithography process
- Patent Title (中): 光刻工艺测试图案的系统和方法
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Application No.: US13046733Application Date: 2011-03-12
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Publication No.: US08501376B2Publication Date: 2013-08-06
- Inventor: Chi Yuan Hung , Bin Zhang , Ze Xi Deng , Li Guo Zhang
- Applicant: Chi Yuan Hung , Bin Zhang , Ze Xi Deng , Li Guo Zhang
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: CN201010123603 20100312
- Main IPC: G03F9/00
- IPC: G03F9/00
Abstract:
A method for performing a photolithography process includes providing a reticle on a projection apparatus, the reticle having a test pattern defined thereon, the test pattern including a plurality of one-dimensional structures and a plurality of two-dimensional structures. The test pattern defined on the reticle is transferred to at least one area on a wafer. The projection apparatus is focused on the test pattern transferred on the wafer during a photolithography process to perform a process monitoring.
Public/Granted literature
- US20110318673A1 SYSTEM AND METHOD FOR TEST PATTERN FOR LITHOGRAPHY PROCESS Public/Granted day:2011-12-29
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