NBT based lead-free piezoelectric materials for high power applications

Invention Grant

US08501031B2 NBT based lead-free piezoelectric materials for high power applications 有权

Title translation: NBT型无铅压电材料用于大功率应用

Patent Title: NBT based lead-free piezoelectric materials for high power applications
Patent Title (中): NBT型无铅压电材料用于大功率应用
Application No.: US12586543

Application Date: 2009-09-24
Publication No.: US08501031B2

Publication Date: 2013-08-06
Inventor: Shujun Zhang , Hyeong Jae Lee , Thomas R Shrout
Applicant: Shujun Zhang , Hyeong Jae Lee , Thomas R Shrout
Applicant Address: US PA University Park
Assignee: The Penn State Research Foundation
Current Assignee: The Penn State Research Foundation
Current Assignee Address: US PA University Park
Agency: Law Offices John A. Parrish
Main IPC: H01L41/187
IPC: H01L41/187 ; C04B35/475 ; C04B35/468

Abstract:

Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0

Abstract(Chinese):

其中（0

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L41/00	一般压电器件；一般电致伸缩器件；一般磁致伸缩器件；专门适用于制造或处理这些器件或其部件的方法或设备；这些器件的零部件(由在一共用基片内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L41/16	.材料的选择
H01L41/18	..用于压电器件或电致伸缩器件的
H01L41/187	...陶瓷合成物