Invention Grant
- Patent Title: Method and apparatus for sputtering onto large flat panels
- Patent Title (中): 用于溅射到大平板上的方法和装置
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Application No.: US11484333Application Date: 2006-07-11
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Publication No.: US08500975B2Publication Date: 2013-08-06
- Inventor: Hien Minh Huu Le , Akihiro Hosokawa , Avi Tepman
- Applicant: Hien Minh Huu Le , Akihiro Hosokawa , Avi Tepman
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C25B9/00
- IPC: C25B9/00 ; C25B11/00 ; C25B13/00 ; C23C14/00

Abstract:
A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90° between them.
Public/Granted literature
- US20070012562A1 Method and apparatus for sputtering onto large flat panels Public/Granted day:2007-01-18
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