Invention Grant
- Patent Title: Anode for sputter coating
- Patent Title (中): 用于溅射镀膜的阳极
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Application No.: US12402322Application Date: 2009-03-11
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Publication No.: US08500973B2Publication Date: 2013-08-06
- Inventor: Georg J. Ockenfuss , Richard I. Seddon
- Applicant: Georg J. Ockenfuss , Richard I. Seddon
- Applicant Address: US CA Milpitas
- Assignee: JDS Uniphase Corporation
- Current Assignee: JDS Uniphase Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Pequignot + Myers LLC
- Agent Matthew A. Pequignot
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C25B11/00 ; C25B13/00

Abstract:
A sputtering anode is disclosed wherein the anode is in the form of a container or vessel; and, wherein the conducting surface communicating with a cathode is the inside surface of the container or vessel. The anode can be mounted outside of a coating chamber having its opening communicating with the chamber or alternatively may be mounted within the chamber. The anode may be an inlet port for receiving inert gas for use in forming the plasma and for pressurizing the anode.
Public/Granted literature
- US20090250341A1 ANODE FOR SPUTTER COATING Public/Granted day:2009-10-08
Information query
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