Invention Grant
US08500905B2 Kyropoulos sapphire single crystal growing apparatus using elliptic crucible
失效
Kyropoulos蓝宝石单晶生长装置使用椭圆形坩埚
- Patent Title: Kyropoulos sapphire single crystal growing apparatus using elliptic crucible
- Patent Title (中): Kyropoulos蓝宝石单晶生长装置使用椭圆形坩埚
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Application No.: US13344498Application Date: 2012-01-05
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Publication No.: US08500905B2Publication Date: 2013-08-06
- Inventor: Jong Kwan Park
- Applicant: Jong Kwan Park
- Applicant Address: KR Ansung
- Assignee: DK Aztec Co., Ltd.
- Current Assignee: DK Aztec Co., Ltd.
- Current Assignee Address: KR Ansung
- Priority: KR10-2011-0007765 20110126
- Main IPC: C30B17/00
- IPC: C30B17/00 ; C30B15/00 ; C30B9/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B11/00 ; C30B28/06 ; C30B35/00 ; C30B29/20
Abstract:
Disclosed is a sapphire single crystal growing apparatus using the Kyropoulos method, and more particularly, is a Kyropoulos sapphire single crystal growing apparatus using an elliptic crucible, which can increase the recovery rate by the elliptic crucible and anisotropic heating.
Public/Granted literature
- US20120186513A1 KYROPOULOS SAPPHIRE SINGLE CRYSTAL GROWING APPARATUS USING ELLIPTIC CRUCIBLE Public/Granted day:2012-07-26
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