A method for polishing a semiconductor wafer having a first side and a second side, the method includes polishing the first side using a Fixed Abrasive Polishing (FAP) with a polishing pad including fixedly bonded abrasives having an average particle size of 0.1-1.0 μm; applying a cement layer with a thickness of at most 3 μm to the polished first side; fixing the polished and cemented first side on a carrier plate of a polishing machine; and polishing the second side using a single-side chemical mechanical polishing.