Invention Grant
US08499440B2 Method of making halogen-free circuitized substrate with reduced thermal expansion
有权
制造具有降低的热膨胀的无卤电路基板的方法
- Patent Title: Method of making halogen-free circuitized substrate with reduced thermal expansion
- Patent Title (中): 制造具有降低的热膨胀的无卤电路基板的方法
-
Application No.: US12380618Application Date: 2009-03-02
-
Publication No.: US08499440B2Publication Date: 2013-08-06
- Inventor: Robert M. Japp , Voya R. Markovich , Kostas I. Papthomas
- Applicant: Robert M. Japp , Voya R. Markovich , Kostas I. Papthomas
- Applicant Address: US NY Endicott
- Assignee: Endicott Interconnect Technologies, Inc.
- Current Assignee: Endicott Interconnect Technologies, Inc.
- Current Assignee Address: US NY Endicott
- Agency: Hinman, Howard & Kattell, LLP
- Agent Mark Levy
- Main IPC: H05K3/20
- IPC: H05K3/20 ; H05K1/00
Abstract:
A method of making a circuitized substrate including a composite layer having a first dielectric sub-layer including a halogen-free resin and fibers dispersed therein and a second dielectric sub-layer without fibers but also including a halogen-free resin with inorganic particulates therein.
Public/Granted literature
Information query
