Invention Grant
US08482973B2 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
有权
非易失性存储单元通过增加多晶半导体材料的顺序来操作
- Patent Title: Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
- Patent Title (中): 非易失性存储单元通过增加多晶半导体材料的顺序来操作
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Application No.: US13568834Application Date: 2012-08-07
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Publication No.: US08482973B2Publication Date: 2013-07-09
- Inventor: S. Brad Herner , Abhijit Bandyopadhyay
- Applicant: S. Brad Herner , Abhijit Bandyopadhyay
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: G11C11/36
- IPC: G11C11/36 ; G11C11/34 ; G11C11/00
Abstract:
A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not in contact with a material having a lattice mismatch of less than 12 percent with the semiconductor junction diode. In addition, no resistance-switching element having its resistance changed by application of a programming voltage by more than a factor of two is disposed between the semiconductor junction diode and the first conductor or between the semiconductor junction diode and the second conductor. Numerous other aspects are provided.
Public/Granted literature
- US20120300533A1 NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTALLINE SEMICONDUCTOR MATERIAL Public/Granted day:2012-11-29
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