Invention Grant
US08477559B2 Burst termination control circuit and semiconductor memory using the same
有权
突发终端控制电路和使用其的半导体存储器
- Patent Title: Burst termination control circuit and semiconductor memory using the same
- Patent Title (中): 突发终端控制电路和使用其的半导体存储器
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Application No.: US13408701Application Date: 2012-02-29
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Publication No.: US08477559B2Publication Date: 2013-07-02
- Inventor: Yin Jae Lee
- Applicant: Yin Jae Lee
- Applicant Address: KR Icheon-Si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-Si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2008-0123545 20081205
- Main IPC: G11C8/18
- IPC: G11C8/18
Abstract:
A semiconductor memory device includes a burst termination control unit and a data output control unit. The burst termination control unit generates a termination control signal, a read command, a write command and a mode resister read command. The data output control unit stops a data output operation in response to the termination control signal.
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