Invention Grant
US08477557B2 Input circuit of semiconductor memory apparatus and controlling method thereof 有权
半导体存储装置的输入电路及其控制方法

  • Patent Title: Input circuit of semiconductor memory apparatus and controlling method thereof
  • Patent Title (中): 半导体存储装置的输入电路及其控制方法
  • Application No.: US13249691
    Application Date: 2011-09-30
  • Publication No.: US08477557B2
    Publication Date: 2013-07-02
  • Inventor: Young Ju KimSu Jeong Sim
  • Applicant: Young Ju KimSu Jeong Sim
  • Applicant Address: KR
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR
  • Agency: Baker & McKenzie LLP
  • Priority: KR10-2008-0013451 20080214; KR10-2008-0077709 20080808
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Input circuit of semiconductor memory apparatus and controlling method thereof
Abstract:
Disclosed is an input circuit of a semiconductor memory apparatus. The input circuit includes a first buffer and a second buffer. The first buffer has an input terminal connected with a first input pin for receiving a control signal used in a multi-control mode for controlling an entire memory area by dividing the entire memory area, and an output terminal having a first level according to a control mode signal. The second buffer has an input terminal connected with a second input pin for receiving one of plural signals used in a single control mode for controlling the entire memory area without dividing the entire memory area, and an output terminal having a second level according to the control mode signal.
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