Invention Grant
- Patent Title: Static memory device with five transistors and operating method
- Patent Title (中): 具有五个晶体管的静态存储器件和操作方法
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Application No.: US12842618Application Date: 2010-07-23
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Publication No.: US08477540B2Publication Date: 2013-07-02
- Inventor: Lahcen Hamouche , Jean-Christophe Lafont
- Applicant: Lahcen Hamouche , Jean-Christophe Lafont
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Slater & Matsil, L.L.P.
- Priority: FR0955274 20090728; FR1050487 20100126
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
At the bottom of a column (COLi) of memory cells (CEL) of the SRAM type with five portless transistors, there is placed an additional cell (CLS), with a structure identical to the cells (CEL), which makes it possible to write and read a datum in a memory cell (CEL) of the column without using a read amplifier.
Public/Granted literature
- US20110026314A1 Static Memory Device with Five Transistors and Operating Method Public/Granted day:2011-02-03
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