Invention Grant
- Patent Title: Thin film capacitor
- Patent Title (中): 薄膜电容器
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Application No.: US12717643Application Date: 2010-03-04
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Publication No.: US08477474B2Publication Date: 2013-07-02
- Inventor: Toshiyuki Yoshizawa , Akira Furuya , Masaomi Ishikura , Keisuke Takasugi , Hiroshi Take
- Applicant: Toshiyuki Yoshizawa , Akira Furuya , Masaomi Ishikura , Keisuke Takasugi , Hiroshi Take
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2009-076077 20090326
- Main IPC: H01G4/00
- IPC: H01G4/00 ; H01G4/005

Abstract:
To provide a thin film capacitor having a device structure for suppressing peeling between an insulating film and a substrate. A thin film capacitor 100 has a laminate structure that is formed by laminating a lower electrode 20, a dielectric film 30, and an upper electrode 40 in sequence on a substrate 10. An adhesion layer 41 is formed on a side surface of the lower electrode 20 via the dielectric film 30, and an insulating film 50 in contact with the adhesion layer 41 covers the laminate structure. According to this device structure, the adhesion layer 41 having excellent adhesiveness to the insulating film 50 is disposed between the insulating film 50 and the dielectric film 30, so that peeling of the insulating film 50 can be suppressed.
Public/Granted literature
- US20100246090A1 THIN FILM CAPACITOR Public/Granted day:2010-09-30
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