Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13306760Application Date: 2011-11-29
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Publication No.: US08476931B2Publication Date: 2013-07-02
- Inventor: Fumiyoshi Matsuoka
- Applicant: Fumiyoshi Matsuoka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2010-267034 20101130
- Main IPC: H03K19/0175
- IPC: H03K19/0175

Abstract:
A semiconductor device includes a core circuit including an integrated circuit; output drivers, each including sub-drivers to output digital data transferred from the core circuit, as output data; and a selector that selects a sub-driver to be driven from among the plurality of sub-drivers. Each of the sub-drivers includes: an output transistor connected between a first power supply and an output wiring line to allow the output data to rise or fall according to the digital data; and a switching transistor and a slew-rate control transistor which are connected in series between a gate of the output transistor and a second power supply. The switching transistor turns on or off the output transistor according to the digital data. A gate potential adjusted to determine a slew rate for rise or fall of the output data is selectively provided by the selector to each slew-rate control transistor.
Public/Granted literature
- US20120133393A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-05-31
Information query
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