Invention Grant
- Patent Title: Piezoelectric device and piezoelectric device manufacturing method
- Patent Title (中): 压电器件和压电器件的制造方法
-
Application No.: US12972644Application Date: 2010-12-20
-
Publication No.: US08476810B2Publication Date: 2013-07-02
- Inventor: Yukihiro Hashi
- Applicant: Yukihiro Hashi
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2010-000429 20100105
- Main IPC: H01L41/053
- IPC: H01L41/053 ; H04R17/00

Abstract:
A piezoelectric device includes: a first substrate; a second substrate disposed opposed to the first substrate; a third substrate disposed between the first substrate and the second substrate, a part of the third substrate forming a piezoelectric oscillating piece, and another part of the third substrate forming a frame which surrounds the piezoelectric oscillating piece; a first metal film which joins the first substrate and the frame; a second metal film which joins the second substrate and the frame; and a resin portion provided at least at any one of positions between the first substrate and the first metal film, between the frame and the first metal film, between the second substrate and the second metal film, and between the frame and the second metal film.
Public/Granted literature
- US20110163637A1 PIEZOELECTRIC DEVICE AND PIEZOELECTRIC DEVICE MANUFACTURING METHOD Public/Granted day:2011-07-07
Information query
IPC分类: