Invention Grant
- Patent Title: Semiconductor device and heat sink with 3-dimensional thermal conductivity
- Patent Title (中): 具有三维导热性的半导体器件和散热片
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Application No.: US13137927Application Date: 2011-09-21
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Publication No.: US08476756B2Publication Date: 2013-07-02
- Inventor: Naotaka Kuroda , Akio Wakejima , Masahiro Tanomura , Hironobu Miyamoto
- Applicant: Naotaka Kuroda , Akio Wakejima , Masahiro Tanomura , Hironobu Miyamoto
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2006-299670 20061102; JP2007-254832 20070928
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/10

Abstract:
A semiconductor device includes a semiconductor element having a rectangular two-dimensional geometry and serving as a heat source, a first heat sink section including the semiconductor element mounted thereon, and a second heat sink section joined to an opposite side of the first heat sink section that includes the semiconductor element. A relation among directional components of thermal conductivity is K1yy≧K1xx>K1zz, where directional components of a three-dimensional thermal conductivity of the heat sink section in X, Y, and Z directions are determined as Kxx, Kyy, and Kzz. A relation among directional components of a thermal conductivity of the second heat sink section is K2zz≧K2yy>K2xx or K2yy≧K2zz>K2xx, where the directional components of the thermal conductivity of the second heat sink section in X, Y, and X directions are determined as K2xx, K2yy, and K2zz.
Public/Granted literature
- US20120012995A1 Semiconductor device Public/Granted day:2012-01-19
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