Invention Grant
- Patent Title: Fluid ejection device comprising substrate contact via
- Patent Title (中): 流体喷射装置包括基板接触孔
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Application No.: US12812776Application Date: 2008-02-28
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Publication No.: US08476742B2Publication Date: 2013-07-02
- Inventor: Gregory N. Burton , Paul I. Mikulan
- Applicant: Gregory N. Burton , Paul I. Mikulan
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2008/055395 WO 20080228
- International Announcement: WO2009/108201 WO 20090903
- Main IPC: H01L23/485
- IPC: H01L23/485
Abstract:
Edges of a first conductive layer (104) and a silicate glass layer (106) extend adjacent one another along a via (164) extending to a semiconductor substrate (41). An electrical conductor (112/114) extends through the via (164) into contact with the semiconductor substrate (41).
Public/Granted literature
- US20100320608A1 Semiconductor Substrate Contact VIA Public/Granted day:2010-12-23
Information query
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