Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13009212Application Date: 2011-01-19
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Publication No.: US08476741B2Publication Date: 2013-07-02
- Inventor: Susumu Obata , Takahiro Sogou , Yusaku Asano , Takeshi Miyagi
- Applicant: Susumu Obata , Takahiro Sogou , Yusaku Asano , Takeshi Miyagi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-046561 20100303
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/31 ; H01L21/4763
Abstract:
According to one embodiment, a semiconductor device includes: a substrate; an organic insulating film provided on the substrate; an inorganic insulating film formed thinner than the organic insulating film on the organic insulating film; a hollow sealing structure that is formed on the inorganic insulating film, and seals a MEMS element in an inside while ensuring a space between the hollow sealing structure itself and the MEMS element; a through hole formed so as to penetrate the organic insulating film and the inorganic insulating film; and a conductive member that is filled into the through hole, and electrically connects the MEMS element and an electrode formed by being filled into the through hole.
Public/Granted literature
- US20110215427A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-08
Information query
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