Invention Grant
- Patent Title: Low leakage diodes
- Patent Title (中): 低漏电二极管
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Application No.: US13030771Application Date: 2011-02-18
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Publication No.: US08476736B2Publication Date: 2013-07-02
- Inventor: Jam-Wem Lee , Yi-Feng Chang
- Applicant: Jam-Wem Lee , Yi-Feng Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/861
- IPC: H01L29/861

Abstract:
A diode includes an anode of a first conductivity type; a first cathode of the first conductivity type; and a second cathode of a second conductivity type opposite the first conductivity type. A lightly-doped region of the first conductivity type is under and vertically overlaps the anode and the first and the second cathodes. The portion of the lightly-doped region directly under the second cathode is fully depleted at a state when no bias voltage is applied between the anode and the second cathode.
Public/Granted literature
- US20120211869A1 Low Leakage Diodes Public/Granted day:2012-08-23
Information query
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