Invention Grant
- Patent Title: Semiconductor component and methods for producing a semiconductor component
- Patent Title (中): 半导体元件及其制造方法
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Application No.: US13156987Application Date: 2011-06-09
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Publication No.: US08476734B2Publication Date: 2013-07-02
- Inventor: Andreas Meiser , Walter Hartner , Hermann Gruber , Dietrich Bonart , Thomas Gross
- Applicant: Andreas Meiser , Walter Hartner , Hermann Gruber , Dietrich Bonart , Thomas Gross
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/763
- IPC: H01L21/763 ; H01L27/105

Abstract:
A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.
Public/Granted literature
- US20110233721A1 SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT Public/Granted day:2011-09-29
Information query
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