Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12770069Application Date: 2010-04-29
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Publication No.: US08476726B2Publication Date: 2013-07-02
- Inventor: Satoshi Shirahama
- Applicant: Satoshi Shirahama
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP.
- Priority: JPP2009-110785 20090430; JPP2010-085124 20100401
- Main IPC: H01L31/0203
- IPC: H01L31/0203 ; H01L23/48

Abstract:
Provided is a semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device has a semiconductor element having a plurality of wires bonded to the semiconductor element with sufficient bonding reliability and has a good heat dissipation property. A semiconductor device in which a first wire is ball bonded on an electrode, and a second wire is further bonded on the ball-bonded first wire, and the first wire or an end of the second wire defines a space between itself and the ball portion of the first wire.
Public/Granted literature
- US20100276802A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2010-11-04
Information query
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