Invention Grant
- Patent Title: Magnetic element having low saturation magnetization
- Patent Title (中): 具有低饱和磁化强度的磁性元件
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Application No.: US13160438Application Date: 2011-06-14
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Publication No.: US08476723B2Publication Date: 2013-07-02
- Inventor: Hide Nagai , Zhitao Diao , Yiming Huai
- Applicant: Hide Nagai , Zhitao Diao , Yiming Huai
- Applicant Address: US CA Milpitas JP
- Assignee: Grandis, Inc.,Renesas Electronics Corporation
- Current Assignee: Grandis, Inc.,Renesas Electronics Corporation
- Current Assignee Address: US CA Milpitas JP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00
Abstract:
A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
Public/Granted literature
- US20110241141A1 Magnetic Element Having Low Saturation Magnetization Public/Granted day:2011-10-06
Information query
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