Invention Grant
US08476717B2 Semiconductor transistors having reduced distances between gate electrode regions
有权
半导体晶体管具有减小栅电极区域之间的距离
- Patent Title: Semiconductor transistors having reduced distances between gate electrode regions
- Patent Title (中): 半导体晶体管具有减小栅电极区域之间的距离
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Application No.: US13357757Application Date: 2012-01-25
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Publication No.: US08476717B2Publication Date: 2013-07-02
- Inventor: Robert C. Wong , Haining S. Yang
- Applicant: Robert C. Wong , Haining S. Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts, LLP
- Agent Ian Mackinnon
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/118

Abstract:
A semiconductor structure. The semiconductor structure includes: a semiconductor substrate which includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface and further includes a first semiconductor body region and a second semiconductor body region; a first gate dielectric region and a second gate dielectric region on top of the first and second semiconductor body regions, respectively; a first gate electrode region on top of the semiconductor substrate and the first gate dielectric region; a second gate electrode region on top of the semiconductor substrate and the second gate dielectric region; and a gate divider region in direct physical contact with the first and second gate electrode regions. The gate divider region does not overlap the first and second gate electrode regions in the reference direction.
Public/Granted literature
- US20120126339A1 SEMICONDUCTOR TRANSISTORS HAVING REDUCED DISTANCES BETWEEN GATE ELECTRODE REGIONS Public/Granted day:2012-05-24
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