A semiconductor device includes a semiconductor substrate; an n-channel MOS transistor including a first gate insulating film provided on a p-type layer, a first gate electrode made of TiN, and a first upper gate electrode made of semiconductor doped with impurities; and a p-channel MOS transistor including a second gate insulating film provided on an n-type layer, a second gate electrode including at least as a part, a TiN layer made of TiN crystal in which a ratio of (111) orientation/(200) orientation is about 1.5 or more, and a second upper gate electrode made of semiconductor doped with impurities.