Invention Grant
- Patent Title: High voltage semiconductor device
- Patent Title (中): 高压半导体器件
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Application No.: US12962702Application Date: 2010-12-08
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Publication No.: US08476705B2Publication Date: 2013-07-02
- Inventor: Hsuehi Huang , Yin-Fu Huang , Shih-Chin Lien
- Applicant: Hsuehi Huang , Yin-Fu Huang , Shih-Chin Lien
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Volpe and Koenig, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device for a high voltage application includes a doped source base region, an N+ source region, a P+ source region and a gate structure. The doped source base region has P-type. The N+ source region extends downwards into the doped source base region. The P+ source region is close to the N+ source region, extends downwards into the doped source base region, and is doped heavier than the doped source base region. The gate structure is coupled to the N+ source region and is near to the P+ source region.
Public/Granted literature
- US20120146139A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE Public/Granted day:2012-06-14
Information query
IPC分类:
