Invention Grant
- Patent Title: Super CMOS devices on a microelectronics system
- Patent Title (中): 超级CMOS器件在微电子系统上
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Application No.: US12343465Application Date: 2008-12-23
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Publication No.: US08476689B2Publication Date: 2013-07-02
- Inventor: Augustine Wei-Chun Chang
- Applicant: Augustine Wei-Chun Chang
- Agency: Sawyer Law Group, P.C.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/095

Abstract:
A low cost IC solution is disclosed in accordance with an embodiment to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and N- Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros are composed of diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.
Public/Granted literature
- US20100155782A1 SUPER CMOS DEVICES ON A MICROELECTRONICS SYSTEM Public/Granted day:2010-06-24
Information query
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