Invention Grant
- Patent Title: On-chip radiation dosimeter
- Patent Title (中): 片上辐射剂量计
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Application No.: US13569745Application Date: 2012-08-08
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Publication No.: US08476683B2Publication Date: 2013-07-02
- Inventor: Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
- Applicant: Michael S. Gordon , Kenneth P. Rodbell , Jeng-Bang Yau
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Louis Percello
- Main IPC: H01L27/14
- IPC: H01L27/14 ; G01T1/02 ; G01T1/24
Abstract:
A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.
Public/Granted literature
- US20130049130A1 ON-CHIP RADIATION DOSIMETER Public/Granted day:2013-02-28
Information query
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