A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.