Invention Grant
- Patent Title: Semiconductor light-emitting devices
- Patent Title (中): 半导体发光器件
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Application No.: US12652977Application Date: 2010-01-06
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Publication No.: US08476658B2Publication Date: 2013-07-02
- Inventor: Jing Jie Dai , Yen Chieh Huang , Shu Ying Yang
- Applicant: Jing Jie Dai , Yen Chieh Huang , Shu Ying Yang
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned over the upper surface in a periodic manner, a first conductive type semiconductor layer positioned over the substrate, a light-emitting structure positioned over the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned over the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.
Public/Granted literature
- US20110121348A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES Public/Granted day:2011-05-26
Information query
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