Invention Grant
- Patent Title: Silicon-germanium, quantum-well, light-emitting diode
- Patent Title (中): 硅锗，量子阱，发光二极管
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Application No.: US13259455Application Date: 2009-09-25
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Publication No.: US08476647B2Publication Date: 2013-07-02
- Inventor: Alexandre M. Bratkovski , Viatcheslav Osipov
- Applicant: Alexandre M. Bratkovski , Viatcheslav Osipov
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/058373 WO 20090925
- International Announcement: WO2011/037574 WO 20110331
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/18 ; H01L31/12 ; H01L33/00
Abstract:
A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.
Public/Granted literature
- US20120175586A1 SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE Public/Granted day:2012-07-12
Information query
IPC分类:
