Invention Grant
- Patent Title: Compound semiconductor device and manufacturing method thereof
- Patent Title (中): 化合物半导体器件及其制造方法
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Application No.: US13289314Application Date: 2011-11-04
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Publication No.: US08476642B2Publication Date: 2013-07-02
- Inventor: Tetsuro Ishiguro , Atsushi Yamada
- Applicant: Tetsuro Ishiguro , Atsushi Yamada
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2010-269663 20101202
- Main IPC: H01L31/0312
- IPC: H01L31/0312 ; H01L21/36 ; H01L21/04
Abstract:
A compound semiconductor device includes a substrate; an initial layer formed over the substrate; and a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor. The initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer.
Public/Granted literature
- US20120138955A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-06-07
Information query
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