Invention Grant
US08476639B2 Group III nitride semiconductor and group III nitride semiconductor structure
有权
III族氮化物半导体和III族氮化物半导体结构
- Patent Title: Group III nitride semiconductor and group III nitride semiconductor structure
- Patent Title (中): III族氮化物半导体和III族氮化物半导体结构
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Application No.: US13323365Application Date: 2011-12-12
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Publication No.: US08476639B2Publication Date: 2013-07-02
- Inventor: Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- Applicant: Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0100773 20081014
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
Public/Granted literature
- US20120086016A1 GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE Public/Granted day:2012-04-12
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