Invention Grant
- Patent Title: Nanostructure optoelectronic device having sidewall electrical contact
- Patent Title (中): 具有侧壁电接触的纳米结构光电器件
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Application No.: US12796569Application Date: 2010-06-08
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Publication No.: US08476637B2Publication Date: 2013-07-02
- Inventor: James C. Kim , Sungsoo Yi , Danny E. Mars
- Applicant: James C. Kim , Sungsoo Yi , Danny E. Mars
- Applicant Address: US CA Sunnyvale
- Assignee: Sundiode Inc.
- Current Assignee: Sundiode Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.
Public/Granted literature
- US20110297913A1 NANOSTRUCTURE OPTOELECTRONIC DEVICE HAVING SIDEWALL ELECTRICAL CONTACT Public/Granted day:2011-12-08
Information query
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