Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12825805Application Date: 2010-06-29
-
Publication No.: US08476619B2Publication Date: 2013-07-02
- Inventor: Ki-Beom Choe
- Applicant: Ki-Beom Choe
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0132812 20091229
- Main IPC: H01L51/00
- IPC: H01L51/00
Abstract:
A semiconductor device includes a gate formed over a substrate, organic semiconductor pattern interposed between the substrate and the gate, junction regions formed in the substrate on both sides of the gate, and junction patterns formed over the junction regions to contact the organic semiconductor patterns.
Public/Granted literature
- US20110156010A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-06-30
Information query
IPC分类:
