Invention Grant
- Patent Title: Method for forming a lateral phase change memory element
- Patent Title (中): 用于形成横向相变存储元件的方法
-
Application No.: US13218331Application Date: 2011-08-25
-
Publication No.: US08476612B2Publication Date: 2013-07-02
- Inventor: John M. Peters
- Applicant: John M. Peters
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L47/00 ; G11C11/00
Abstract:
A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.
Public/Granted literature
- US20110309320A1 METHOD FOR ACTIVE PINCH OFF OF AN OVONIC UNIFIED MEMORY ELEMENT Public/Granted day:2011-12-22
Information query
IPC分类:
