Invention Grant
US08476596B2 Thin film transistor array substrate for X-ray detector and X-ray detector
有权
用于X射线检测器和X射线检测器的薄膜晶体管阵列基板
- Patent Title: Thin film transistor array substrate for X-ray detector and X-ray detector
- Patent Title (中): 用于X射线检测器和X射线检测器的薄膜晶体管阵列基板
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Application No.: US13301486Application Date: 2011-11-21
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Publication No.: US08476596B2Publication Date: 2013-07-02
- Inventor: Chul-Woo Shin
- Applicant: Chul-Woo Shin
- Applicant Address: KR Yongin, Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-do
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: KR10-2010-0132826 20101222
- Main IPC: G01T1/24
- IPC: G01T1/24

Abstract:
A thin film transistor (TFT) array substrate for an X-ray detector that improves a fill factor is disclosed. According to one aspect, the substrate includes a plurality of pixel areas each including a transistor area in which a TFT is formed, and a photodiode area in which a photodiode is formed. A first wire is formed in a first layer disposed in a lower portion of a photodiode layer in which the photodiode is formed, in at least a portion of the transistor area of the photodiode layer, and in a second layer disposed in an upper portion of the photodiode layer. A second wire, insulated from the first wire, extends in the pixel areas and is formed in the second layer. At least one TFT is formed in the transistor area and electrically connected to at least one of the first and second wires.
Public/Granted literature
- US20120161018A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE FOR X-RAY DETECTOR AND X-RAY DETECTOR Public/Granted day:2012-06-28
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