Invention Grant
- Patent Title: Photoelectric conversion film-stacked type solid-state imaging device and method of manufacturing the same
- Patent Title (中): 光电转换膜堆叠型固态成像装置及其制造方法
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Application No.: US12861238Application Date: 2010-08-23
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Publication No.: US08476573B2Publication Date: 2013-07-02
- Inventor: Hirofumi Yamashita
- Applicant: Hirofumi Yamashita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-194543 20090825
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
According to one embodiment, a solid-state imaging device with a plurality of light-receiving layers for acquiring different color signals stacked one on top of another in the optical direction. Each of the light-receiving layers includes a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part. A semiconductor layer is stacked via an insulating film on the front side of the top layer of the plurality of light-receiving layers. At the semiconductor layer, there is provided a signal scanning circuit which processes a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside.
Public/Granted literature
- US20110049333A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-03-03
Information query
IPC分类: