Invention Grant
- Patent Title: Method for forming Cu electrical interconnection film
- Patent Title (中): 形成铜电互连膜的方法
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Application No.: US12935746Application Date: 2009-07-14
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Publication No.: US08476161B2Publication Date: 2013-07-02
- Inventor: Shoichiro Kumamoto , Masamichi Harada , Harunori Ushikawa
- Applicant: Shoichiro Kumamoto , Masamichi Harada , Harunori Ushikawa
- Applicant Address: JP Chigasaki
- Assignee: Ulvac, Inc.
- Current Assignee: Ulvac, Inc.
- Current Assignee Address: JP Chigasaki
- Agency: Arent Fox LLP
- Priority: JP2008-187816 20080718
- International Application: PCT/JP2009/062745 WO 20090714
- International Announcement: WO2010/007991 WO 20100121
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C16/04 ; C23C16/18
Abstract:
Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350° C. or below, and the Cu electrical interconnection film is formed.
Public/Granted literature
- US20110104890A1 METHOD FOR FORMING CU ELECTRICAL INTERCONNECTION FILM Public/Granted day:2011-05-05
Information query
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