Invention Grant
- Patent Title: Method of manufacture and structure for a trench transistor having a heavy body region
- Patent Title (中): 具有重体区域的沟槽晶体管的制造方法和结构
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Application No.: US12685592Application Date: 2010-01-11
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Publication No.: US08476133B2Publication Date: 2013-07-02
- Inventor: Brian Sze-Ki Mo , Duc Chau , Steven Sapp , Izak Bencuya , Dean Edward Probst
- Applicant: Brian Sze-Ki Mo , Duc Chau , Steven Sapp , Izak Bencuya , Dean Edward Probst
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66
Abstract:
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
Public/Granted literature
- US20100112767A1 Method of Manufacturing a Trench Transistor Having a Heavy Body Region Public/Granted day:2010-05-06
Information query
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