Semiconductor device having insulated gate field effect transistors and method of fabricating the same

Invention Grant

US08476128B2 Semiconductor device having insulated gate field effect transistors and method of fabricating the same 有权

Title translation: 具有绝缘栅场效应晶体管的半导体器件及其制造方法

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Patent Title: Semiconductor device having insulated gate field effect transistors and method of fabricating the same
Patent Title (中): 具有绝缘栅场效应晶体管的半导体器件及其制造方法
Application No.: US12652062

Application Date: 2010-01-05
Publication No.: US08476128B2

Publication Date: 2013-07-02
Inventor: Yusuke Arayashiki
Applicant: Yusuke Arayashiki
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Priority: JPP2009-003840 20090109
Main IPC: H01L21/8238
IPC: H01L21/8238

Semiconductor device having insulated gate field effect transistors and method of fabricating the same

Abstract:

A CMOSFET is composed of a P-channel MOSFET and an N-channel MOSFET formed on a silicon substrate. The P-channel MOSFET is formed a first gate insulating film, a first hafnium layer and a first gate electrode which are stacked on the silicon substrate. The N-channel MOSFET is formed a second gate insulating film, a second hafnium layer and a second gate electrode which are stacked on the silicon substrate. A surface density of the second hafnium layer is lower than a surface density of the first hafnium layer.

Abstract(Chinese):

CMOSFET由形成在硅衬底上的P沟道MOSFET和N沟道MOSFET组成。 P沟道MOSFET形成在第一栅极绝缘膜，第一铪层和第一栅电极上，层叠在硅基板上。 N沟道MOSFET形成层叠在硅衬底上的第二栅绝缘膜，第二铪层和第二栅电极。第二铪层的表面密度低于第一铪层的表面密度。

Public/Granted literature

US20100176455A1 SEMICONDUCTOR DEVICE HAVING INSULATED GATE FIELD EFFECT TRANSISTORS AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-07-15

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS