Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region

Invention Grant

US08476099B2 Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region 有权

Title translation: 通过形成界面区域来改善成像器微透镜结构的保护层的附着的方法

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Patent Title: Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region
Patent Title (中): 通过形成界面区域来改善成像器微透镜结构的保护层的附着的方法
Application No.: US12841750

Application Date: 2010-07-22
Publication No.: US08476099B2

Publication Date: 2013-07-02
Inventor: Edward C. Cooney, III , Jeffrey P. Gambino , Robert K. Leidy , Charles F. Musante , John G. Twombly
Applicant: Edward C. Cooney, III , Jeffrey P. Gambino , Robert K. Leidy , Charles F. Musante , John G. Twombly
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Roberts Mlotkowski Safran & Cole, P.C.
Agent Anthony Canale
Main IPC: H01L21/473
IPC: H01L21/473 ; H01L31/18

Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region

Abstract:

Methods, structures, and design structures for improved adhesion of protective layers of imager microlens structures are disclosed. A method of fabricating a semiconductor structure includes forming an interfacial region between a microlens and a protective oxide layer. The interfacial region has a lower concentration of oxygen than the protective oxide layer.

Abstract(Chinese):

公开了用于改善成像器微透镜结构保护层附着力的方法，结构和设计结构。制造半导体结构的方法包括在微透镜和保护氧化物层之间形成界面区域。界面区域的氧浓度低于保护氧化物层。

Public/Granted literature

US20120018832A1 METHODS, STRUCTURES, AND DESIGN STRUCTURES FOR IMPROVED ADHESION OF PROTECTIVE LAYERS OF IMAGER MICROLENS STRUCTURES Public/Granted day:2012-01-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/471	.......无机层（H01L21/475，H01L21/4757优先）
H01L21/473	........由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层