Invention Grant
US08474396B2 Developing apparatus, resist pattern forming method and storage medium
有权
显影装置,抗蚀剂图案形成方法和存储介质
- Patent Title: Developing apparatus, resist pattern forming method and storage medium
- Patent Title (中): 显影装置,抗蚀剂图案形成方法和存储介质
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Application No.: US12836137Application Date: 2010-07-14
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Publication No.: US08474396B2Publication Date: 2013-07-02
- Inventor: Masahiro Fukuda , Atsushi Ookouchi , Taro Yamamoto
- Applicant: Masahiro Fukuda , Atsushi Ookouchi , Taro Yamamoto
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Abelman, Frayne & Schwab
- Priority: JP2009-169539 20090717
- Main IPC: B05B7/16
- IPC: B05B7/16

Abstract:
Provided is a developing apparatus configured to slim the resist pattern while reducing the number of developing modules. A room temperature developing liquid and a high temperature developing liquid to modify the surface layer of a resist pattern can be supplied from a common nozzle to a substrate disposed on a mount table. Although both developing liquids may be sequentially discharged by switching between the supply line for the room temperature developing liquid and the supply line for the high temperature developing liquid, it is also possible to join these supply lines for supplying the room temperature developing liquid from the former supply line, and then adjust the ratio of the flow rates between both supply lines, and then supply the mixed liquid of the developing liquids as a high temperature developing liquid.
Public/Granted literature
- US20110014379A1 DEVELOPING APPARATUS, RESIST PATTERN FORMING METHOD AND STORAGE MEDIUM Public/Granted day:2011-01-20
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