Invention Grant
- Patent Title: Method for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads
- Patent Title (中): 提高热稳定性,改善偏压和减少自固定邻接接头中静电放电损伤的方法
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Application No.: US11494241Application Date: 2006-07-27
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Publication No.: US08474127B2Publication Date: 2013-07-02
- Inventor: Hardayal Singh Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- Applicant: Hardayal Singh Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Merchant & Gould P.C.
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00

Abstract:
A method for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The method includes forming a free layer, forming first hard bias layers abutting the free layer and forming second hard bias layers over the first hard bias layers discontiguous from the free layer, the second hard bias layers being anti-parallel to the first hard bias layers, the first and second hard bias layers providing a net longitudinal bias on the free layer.
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