Invention Grant
- Patent Title: Technology migration for integrated circuits with radical design restrictions
- Patent Title (中): 具有激进设计限制的集成电路的技术迁移
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Application No.: US12726413Application Date: 2010-03-18
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Publication No.: US08464189B2Publication Date: 2013-06-11
- Inventor: Robert J. Allen , Cam V. Endicott , Fook-Luen Heng , Jason D. Hibbeler , Kevin W. McCullen , Rani Narayan , Robert F. Walker , Xin Yuan
- Applicant: Robert J. Allen , Cam V. Endicott , Fook-Luen Heng , Jason D. Hibbeler , Kevin W. McCullen , Rani Narayan , Robert F. Walker , Xin Yuan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Richard M. Kotulak
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.
Public/Granted literature
- US20100185997A1 TECHNOLOGY MIGRATION FOR INTEGRATED CIRCUITS WITH RADICAL DESIGN RESTRICTIONS Public/Granted day:2010-07-22
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