Invention Grant
- Patent Title: Fracturing continuous photolithography masks
- Patent Title (中): 压裂连续光刻掩模
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Application No.: US13453262Application Date: 2012-04-23
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Publication No.: US08448098B2Publication Date: 2013-05-21
- Inventor: Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
- Applicant: Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Garg Law Firm, PLLC
- Agent Rakesh Garg; Eustus D. Nelson
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
Public/Granted literature
- US20120210281A1 FRACTURING CONTINUOUS PHOTOLITHOGRAPHY MASKS Public/Granted day:2012-08-16
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