Invention Grant
- Patent Title: Programmable memory repair scheme
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Application No.: US12922425Application Date: 2009-04-09
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Publication No.: US08446788B2Publication Date: 2013-05-21
- Inventor: Adrian E. Ong , Fan Ho
- Applicant: Adrian E. Ong , Fan Ho
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Lowenstein Sandler LLP
- International Application: PCT/US2009/040079 WO 20090409
- International Announcement: WO2009/126812 WO 20091015
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00

Abstract:
The present disclosure provides semiconductor devices and methods, systems, and apparatus for testing and operating the same. A semiconductor memory device includes data storage elements and a repair circuit. The data storage elements include primary data storage elements and one or more redundant data storage elements, the primary data storage elements having respective addresses for memory access operations. The repair circuit is programmable by another semiconductor device separate from the memory device to recognize a malfunctioning address of the primary data storage elements and the programmed repair circuit is configured to reroute memory access from a primary data storage element having the recognized malfunctioning address to a corresponding redundant data storage element.
Public/Granted literature
- US20110016352A1 PROGRAMMABLE MEMORY REPAIR SCHEME Public/Granted day:2011-01-20
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