Invention Grant
US08446785B2 Latency control circuit, latency control method thereof, and semiconductor memory device including the same 有权
延迟控制电路,其等待时间控制方法和包括该延迟控制电路的半导体存储器件

  • Patent Title: Latency control circuit, latency control method thereof, and semiconductor memory device including the same
  • Patent Title (中): 延迟控制电路,其等待时间控制方法和包括该延迟控制电路的半导体存储器件
  • Application No.: US13207979
    Application Date: 2011-08-11
  • Publication No.: US08446785B2
    Publication Date: 2013-05-21
  • Inventor: Min-Su ParkJae-II Kim
  • Applicant: Min-Su ParkJae-II Kim
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2011-0037366 20110421
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Latency control circuit, latency control method thereof, and semiconductor memory device including the same
Abstract:
A latency control circuit of a semiconductor device includes a phase detection unit configured to generate phase information regarding a phase difference between an external clock and an internal clock, a delay amount deciding unit configured to decide a latency delay amount based on path information of an input signal, a latency value of the input signal, and the phase information, and a latency delay unit configured to generate a latency signal by delaying the input signal according to the latency delay amount and the phase information to produce a delayed input signal and by synchronizing the delayed input signal with the internal clock.
Information query
Patent Agency Ranking
0/0