Invention Grant
US08446785B2 Latency control circuit, latency control method thereof, and semiconductor memory device including the same
有权
延迟控制电路,其等待时间控制方法和包括该延迟控制电路的半导体存储器件
- Patent Title: Latency control circuit, latency control method thereof, and semiconductor memory device including the same
- Patent Title (中): 延迟控制电路,其等待时间控制方法和包括该延迟控制电路的半导体存储器件
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Application No.: US13207979Application Date: 2011-08-11
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Publication No.: US08446785B2Publication Date: 2013-05-21
- Inventor: Min-Su Park , Jae-II Kim
- Applicant: Min-Su Park , Jae-II Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0037366 20110421
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A latency control circuit of a semiconductor device includes a phase detection unit configured to generate phase information regarding a phase difference between an external clock and an internal clock, a delay amount deciding unit configured to decide a latency delay amount based on path information of an input signal, a latency value of the input signal, and the phase information, and a latency delay unit configured to generate a latency signal by delaying the input signal according to the latency delay amount and the phase information to produce a delayed input signal and by synchronizing the delayed input signal with the internal clock.
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