Invention Grant
- Patent Title: Method of self monitoring and self repair for a semiconductor IC
- Patent Title (中): 半导体IC的自我监测和自我修复方法
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Application No.: US12625235Application Date: 2009-11-24
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Publication No.: US08446161B2Publication Date: 2013-05-21
- Inventor: Chingwen Chang
- Applicant: Chingwen Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01R31/3187
- IPC: G01R31/3187 ; G01R31/10
Abstract:
A method for self repair of a semiconductor IC is presented. An IC state is set to test/repair mode upon powering up the IC. Fuse data is loaded from an e-fuse module. Defects or faults are detected by employing a built in self test (BIST) module. The IC self repairs using redundant circuitry by employing a built in self repair (BISR) module to repair each fault using redundant circuitry. The fault locations and repair locations are stored in the e-fuse module. The semiconductor IC state is changed to mission mode.
Public/Granted literature
- US20100237876A1 Method of Self Monitoring and Self Repair for a Semiconductor IC Public/Granted day:2010-09-23
Information query
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