Invention Grant
- Patent Title: Field emission cathode structure and field emission display using the same
- Patent Title (中): 场发射阴极结构和场发射显示使用相同
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Application No.: US13072774Application Date: 2011-03-28
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Publication No.: US08446087B2Publication Date: 2013-05-21
- Inventor: Hai-Yan Hao , Jie Tang , Shou-Shan Fan
- Applicant: Hai-Yan Hao , Jie Tang , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201010600408 20101222
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J63/04

Abstract:
A field emission cathode structure includes an insulating substrate, a number of strip cathode electrodes, a number of insulators, a number of strip gate electrodes, a number of electron emission units, and a number of fixing layers. The number of insulators is located among and spaced apart from the number of strip cathode electrodes. The field emission cathode structure further satisfies the following conditions: D1≦D2/10, wherein, D1 is defined as a width of each of the number of insulators, and D2 is defined as a distance between centerlines of each two adjacent field emission units of the number of field emission units.
Public/Granted literature
- US20120161606A1 FIELD EMISSION CATHODE STRUCTURE AND FIELD EMISSION DISPLAY USING THE SAME Public/Granted day:2012-06-28
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